Microchip launches 3,3 kV power modules targeting AI data centers

Microchip Technology has announced the availability of its new 3,3 kV HV-D3 mSiC Power Modules, aimed at simplifying the adoption of solid-state transformers in AI hyperscale data centers and other high-voltage power applications. The modules combine silicon carbide MOSFETs and Schottky diodes in a standard 62 mm package. The idea is to allow efficient power delivery from the medium-voltage grid directly to the server rack, cutting out some of the complexity that currently comes with that conversion.

Built on Microchip’s mSiC MOSFET technology, the devices offer RDS(on) stability over temperature and packaging that supports 6 kV isolation. The packaging incorporates CTI 600-rated materials and features extended creepage distances, designed to allow safe series connection for high-voltage operation. A silicon nitride substrate provides enhanced thermal conductivity and power-cycling capability, helping designers achieve higher power density with less aggressive cooling requirements.

According to Clayton Pillion, vice president of Microchip’s high-power solutions business unit, the higher voltage rating has a practical benefit when connecting to the 13,8 kV or 34,5 kV grids that large data centers typically use: it roughly halves the number of series connected devices needed compared to lower-voltage SiC alternatives. Pillion also noted that the modules are intended to fill a gap in the market for 100-300 A products – a range that falls between individual discrete SiC devices and the much larger power modules.

Beyond data centers, Microchip is positioning the modules for a fairly broad set of applications – megawatt-scale charging for heavy-duty vehicles, auxiliary power in rail and heavy transport, medium-voltage motor drives, and industrial and defense power systems. The common thread across those use cases is a need for high isolation, thermal reliability, and efficient power conversion.